Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …
Performance enhancement and bending restoration for flexible amorphous indium gallium zinc oxide thin-film transistors by low-temperature supercritical dehydration …
For high-performance and high-lifetime flexible and wearable electronic applications, a low-
temperature posttreatment method is highly expected to enhance the device performance …
temperature posttreatment method is highly expected to enhance the device performance …
Regulation of selenium composition by supercritical carbon dioxide for CZTSSe solar cells efficiency improvement
HQ Xiao, WH Zhou, DX Kou, ZJ Zhou, YN Meng… - Solar Energy Materials …, 2021 - Elsevier
Se-rich selenization offers remarkable benefits for grain growth of Cu 2 ZnSn (S, Se) 4
(CZTSSe) absorber layers, which is critical for solar cells fabrication. However, low-activity …
(CZTSSe) absorber layers, which is critical for solar cells fabrication. However, low-activity …
Enhancement in photoelectric properties of ITO films by regulating defects and dopants with supercritical fluid treatment
Z Liu, Y Zhou, Y Ping, L Qian, J Li, L Liu, Y Liu… - Applied Surface …, 2021 - Elsevier
The carrier concentration of the indium tin oxide (ITO) thin films can be enhanced by
supplying extra conducting electrons with tin dopants. However, defects and impurities …
supplying extra conducting electrons with tin dopants. However, defects and impurities …
Performance enhancement for tungsten-doped indium oxide thin film transistor by hydrogen peroxide as cosolvent in room-temperature supercritical fluid systems
In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-
phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies …
phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies …
Low temperature defect passivation technology for semiconductor electronic devices—Supercritical fluids treatment process
Currently, defects existing in materials and at the interface are the main bottlenecks limiting
the manufacture of high-performance electron devices, especially semiconductor devices …
the manufacture of high-performance electron devices, especially semiconductor devices …
Advanced low-temperature–high-pressure hydrogen treatment for interface defect passivation in Si-and SiGe-channel MOSCAPs
KH Chen, CY Lin, MC Chen, YS Lin… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This work investigates a low-temperature and high-pressure (LTHP) hydrogen treatment in
Si-channel and SiGe-channel metal-oxide-semiconductor capacitors (MOSCAPs). The …
Si-channel and SiGe-channel metal-oxide-semiconductor capacitors (MOSCAPs). The …
Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation
A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated
to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium …
to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium …
Performance enhancement and mechanism exploration of all-carbon-nanotube memory with hydroxylation and dehydration through supercritical carbon dioxide
Carbon nanotubes based non-volatile memories (NVMs) with excellent electronic properties
can provide high bit density and energy efficiency. But with the limit of the process …
can provide high bit density and energy efficiency. But with the limit of the process …
Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation
In order to improve the thermal resistance and stability of indium gallium zinc oxide material,
different oxygen vacancy passivation treatments have been carried out for comparison in …
different oxygen vacancy passivation treatments have been carried out for comparison in …