Recent progress in materials chemistry to advance flexible bioelectronics in medicine

G Balakrishnan, J Song, C Mou… - Advanced …, 2022 - Wiley Online Library
Designing bioelectronic devices that seamlessly integrate with the human body is a
technological pursuit of great importance. Bioelectronic medical devices that reliably and …

Nanocrystalline electroplated Cu–Ni: Metallic thin films with enhanced mechanical properties and tunable magnetic behavior

E Pellicer, A Varea, S Pané, BJ Nelson… - Advanced Functional …, 2010 - Wiley Online Library
Nanocrystalline 3 µm thick Cu1–xNix (0.45≤ x≤ 0.87) films are electrodeposited
galvanostatically onto Cu/Ti/Si (100) substrates, from a citrate‐and sulphate‐based bath …

Material structure and mechanical properties of silicon nitride and silicon oxynitride thin films deposited by plasma enhanced chemical vapor deposition

Z Gan, C Wang, Z Chen - Surfaces, 2018 - mdpi.com
Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication
and microelectromechanical systems (MEMS). Their mechanical properties are important for …

Amorphous silicon thin-film transistors on steel foil substrates

SD Theiss, S Wagner - IEEE Electron Device Letters, 1996 - ieeexplore.ieee.org
We report the successful fabrication of high-quality a-Si: H thin-film transistors (TFTs) on
stainless steel foil substrates. TFTs with an inverted-staggered structure were grown on 200 …

Surface etching, chemical modification and characterization of silicon nitride and silicon oxide—selective functionalization of Si3N4 and SiO2

LH Liu, DJ Michalak, TP Chopra… - Journal of Physics …, 2016 - iopscience.iop.org
The ability to selectively chemically functionalize silicon nitride (Si 3 N 4) or silicon dioxide
(SiO 2) surfaces after cleaning would open interesting technological applications. In order to …

Formation of silicon nitride films by remote plasma‐enhanced chemical vapour deposition

SE Alexandrov, ML Hitchman… - Advanced Materials for …, 1993 - Wiley Online Library
In this paper we describe the growth of silicon nitride from nitrogen and silane for the first
time by capacitively coupled remote PECVD. We report on the effect of process parameters …

Synthesis and characterization of silicon carbonitride films by plasma enhanced chemical vapor deposition (PECVD) using bis (dimethylamino) dimethylsilane …

W Kafrouni, V Rouessac, A Julbe, J Durand - Applied Surface Science, 2010 - Elsevier
Silicon carbonitride thin films have been deposited by plasma enhanced chemical vapor
deposition (PECVD) from bis (dimethylamino) dimethylsilane (BDMADMS) as a function of …

[HTML][HTML] SiNx coatings deposited by reactive high power impulse magnetron sputtering: Process parameters influencing the residual coating stress

S Schmidt, T Hänninen, J Wissting, L Hultman… - Journal of Applied …, 2017 - pubs.aip.org
The residual coating stress and its control is of key importance for the performance and
reliability of silicon nitride (SiN x) coatings for biomedical applications. This study explores …

Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition

T Karabacak, YP Zhao, GC Wang, TM Lu - Physical Review B, 2002 - APS
The dynamic roughening of amorphous silicon nitride growth front prepared by a plasma-
enhanced chemical vapor deposition is presented. Morphology of the films grown at different …

Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell

E Lee, H Lee, J Choi, D Oh, J Shim, K Cho… - Solar energy materials …, 2011 - Elsevier
A record in laser doped selective emitter (LDSE) solar cells with an efficiency η= 19.2% is
reported. In this study, we investigate the effect of SiNx films for laser doped selective emitter …