Materials for emergent silicon-integrated optical computing
Progress in computing architectures is approaching a paradigm shift: traditional computing
based on digital complementary metal-oxide semiconductor technology is nearing physical …
based on digital complementary metal-oxide semiconductor technology is nearing physical …
Synthesis of coordination polymers from the heterometallic carboxylate complexes with chelating N-donor ligands
MA Shmelev, NV Gogoleva, DA Makarov… - Russian Journal of …, 2020 - Springer
Abstract New trinuclear Cd–Ln molecular complexes [EuCd 2 (O 2 CC 6 F 5) 6 (NO 3)(Bipy)
2](I, Bipy is 2, 2'-bipyridine) and [LnCd 2 (Bzo) 6 (NO 3)(Phen) 2]· 4MeCN (Ln= Tb (II), Eu …
2](I, Bipy is 2, 2'-bipyridine) and [LnCd 2 (Bzo) 6 (NO 3)(Phen) 2]· 4MeCN (Ln= Tb (II), Eu …
[HTML][HTML] GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1) Si: Lattice tilt, mosaicity and defects content
Integration of III-V devices with Si-photonics and fabrication of monolithic III-V/Si tandem
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
solar cells require the heteroepitaxy of III-V compounds on Si. We report on the lattice tilt …
[HTML][HTML] Selective area heteroepitaxy of low dislocation density antiphase boundary free GaAs microridges on flat-bottom (001) Si for integrated silicon photonics
Integrating III–V gain elements in the silicon photonics platform via selective area
heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits …
heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits …
Interplay of coordinative and supramolecular interactions in formation of a series of metal–organic complexes bearing diverse dimensionalities
JQ Liu, YN Zhang, YY Wang, JC Jin… - Dalton …, 2009 - pubs.rsc.org
A series of new metal–organic coordination complexes,{[Ni (IP)(H2O) 4]·(2H2O)(SO4)}(1),[M
(IP)(μ2-SO4)(H2O) 2](M= Zn 2, and M= Mn 3),{[M2 (IP) 2 (μ2-SO4) 2 (H2O) 4]· 2H2O}(M= Zn …
(IP)(μ2-SO4)(H2O) 2](M= Zn 2, and M= Mn 3),{[M2 (IP) 2 (μ2-SO4) 2 (H2O) 4]· 2H2O}(M= Zn …
Orbital hybridization-induced band offset phenomena in Ni x Cd 1− x O thin films
Herein, we present the cationic impurity-assisted band offset phenomena in NixCd1− xO (x=
0, 0.02, 0.05, 0.1, 0.2, 0.4, 0.8, and 1) thin films and further discuss them based on orbital …
0, 0.02, 0.05, 0.1, 0.2, 0.4, 0.8, and 1) thin films and further discuss them based on orbital …
III–V Microwires with Reversed Ridge Waveguides Selectively Grown on Pre-Patterned Si Substrates
Z Yang, X Zhou, W Yang, M Wang, H Yu, Y Zhang… - Crystals, 2022 - mdpi.com
To construct functional photonic integrated circuits, an efficient and compact laser is
expected to be incorporated into the complementary metal–oxide–semiconductor platform …
expected to be incorporated into the complementary metal–oxide–semiconductor platform …
Large-scale aqueous synthesis and growth mechanism of single-crystalline metal nanoscrolls at room temperature: The case of nickel
Here we report a simple and versatile one-pot route for the large-scale synthesis of single-
crystalline Ni nanoscrolls at room temperature. The procedure is very simple, and only two …
crystalline Ni nanoscrolls at room temperature. The procedure is very simple, and only two …
Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy
InGaAs/GaAs multi-quantum wells were selectively grown on flat-bottom (001) silicon
recesses and their efficiencies were improved by introducing GaAsP strain compensation …
recesses and their efficiencies were improved by introducing GaAsP strain compensation …
Effect of Ligand Chain Length for Tuning of Molecular Dimensionality and Magnetic Relaxation in Redox Active Cobalt (II) EDOT Complexes (EDOT= 3, 4 …
Abstract Four cobalt (II) complexes,[Co (L1) 2 (NCX) 2 (MeOH) 2](X= S (1), Se (2)) and {[Co
(L2) 2 (NCX) 2]} n (X= S (3), Se (4))(L1= 2, 5‐dipyridyl‐3, 4,–ethylenedioxylthiophene and …
(L2) 2 (NCX) 2]} n (X= S (3), Se (4))(L1= 2, 5‐dipyridyl‐3, 4,–ethylenedioxylthiophene and …