Submicron scaling of HBTs
MJW Rodwell, M Urteaga, T Mathew… - … on Electron Devices, 2001 - ieeexplore.ieee.org
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed.
High bandwidths are obtained by thinning the base and collector layers, increasing emitter …
High bandwidths are obtained by thinning the base and collector layers, increasing emitter …
Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
Scaling of InGaAs/InAlAs HBTs for high speed mixed-signal and mm-wave ICs
MJW Rodwell, M Urteaga, Y Betser… - … Journal of High …, 2001 - World Scientific
High bandwidths are obtained with heterojunction bipolar transistors by thinning the base
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
and collector layers, increasing emitter current density, decreasing emitter contact resistivity …
A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits
K Honjo - Solid-State Electronics, 2000 - Elsevier
A class-F amplifier circuit by which the transistor load impedance, for even-order higher
harmonics, can be kept “zero” and that for odd-order higher harmonics can be kept “open” …
harmonics, can be kept “zero” and that for odd-order higher harmonics can be kept “open” …
Extrapolated f/sub max/of heterojunction bipolar transistors
M Vaidyanathan, DL Pulfrey - IEEE Transactions on Electron …, 1999 - ieeexplore.ieee.org
It is shown that the extrapolated f/sub max/of heterojunction bipolar transistors (HBT's) can
be written in the form f/sub max/=/spl radic/f/sub T//8/spl pi/(RC)/sub eff/, where f/sub T/is the …
be written in the form f/sub max/=/spl radic/f/sub T//8/spl pi/(RC)/sub eff/, where f/sub T/is the …
Selective area growth of InP through narrow openings by MOCVD and its application to InP HBT
Y Dong, YL Okuno, UK Mishra - … onIndium Phosphide and …, 2003 - ieeexplore.ieee.org
Selective growth behavior of InP through narrow openings (< 2/spl mu/m) by metal-organic
chemical vapor deposition (MOCVD) was investigated. The lateral overgrowth was observed …
chemical vapor deposition (MOCVD) was investigated. The lateral overgrowth was observed …
A low phase-noise 38-GHz HBT MMIC oscillator utilizing a novel transmission line resonator
K Hosoya, S Tanaka, Y Amamiya… - 2000 IEEE MTT-S …, 2000 - ieeexplore.ieee.org
This paper reports on a low phase noise 38 GHz-band HBT MMIC oscillator employing a
newly proposed transmission line resonator. The achieved phase noise of-114 dBc/Hz at 1 …
newly proposed transmission line resonator. The achieved phase noise of-114 dBc/Hz at 1 …
50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs
Y Suzuki, H Shimawaki, Y Amamiya… - IEEE Journal of Solid …, 1998 - ieeexplore.ieee.org
Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown
base contacts, have been demonstrated. The transimpedance amplifier achieved a …
base contacts, have been demonstrated. The transimpedance amplifier achieved a …
A low phase-noise 18-GHz HBT oscillator utilizing a (/spl lambda//4/spl plusmn//spl delta/) open stubs resonator
K Hosoya, S Tanaka, Y Amamiya… - 1999 Asia Pacific …, 1999 - ieeexplore.ieee.org
This paper reports on a low phase noise 18 GHz-band HBT oscillator employing a newly
proposed transmission line resonator. The phase noise of-96 dBc/Hz at 100 kHz offset …
proposed transmission line resonator. The phase noise of-96 dBc/Hz at 100 kHz offset …
Ultra high-speed InP-InGaAs SHBTs with fmax of 478 GHz
D Yu, K Lee, B Kim, D Ontiveros… - IEEE Electron …, 2003 - ieeexplore.ieee.org
InP-based single heterojunction bipolar transistors (SHBTs) for high-speed circuit
applications were developed. Typical common emitter DC current gain (/spl beta/) and …
applications were developed. Typical common emitter DC current gain (/spl beta/) and …