We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

The unique properties of graphene have led to the use of this allotrope of carbon in a wide
range of applications, including semiconductors, energy devices, diffusion barriers, heat …

Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …

For the first time, this work presents a novel room temperature time-effective concept to
manipulate the crystallization kinetics and magnetic responses of thin films grown on …

Amorphous Ga2O3 thin films have been grown on SiO2/Si substrates by atomic layer
deposition (ALD) using tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) gallium (III)[Ga …

Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular
oxygen as the reactant gas and deposition temperatures in the 250–300° C range. In this …

Recent advances in polycrystalline Ge layers formed through solid-phase crystallization
have demonstrated carrier mobilities superior to those of single-crystal Si. In this study, we …

VO2 and V2O3 thin films have been prepared by controlled oxidation and reduction
reactions in the vanadium–oxygen system. During these reactions, crystalline phase …

We examine graphitization of amorphous carbon (aC) in aC/Ni bilayer samples having the
structure Si/SiO 2/aC (3–30 nm)/Ni (100 nm). In situ x-ray diffraction (XRD) measurements …

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …