Nano-grinding is an essential step in ultra-precision machining for brittle material
semiconductor workpieces in order to improve the surface quality and preserve strength …

Molecular Dynamics simulations were carried out to study the formation mechanism of
subsurface damage during the process of nano-grinding of gallium nitride (GaN). The effects …

The elastoplastic deformation mechanisms of irradiated aluminum (Al)-doped gallium nitride
(GaN) under contact loading are investigated in this work using the nanoindentation …

Abstract Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-
ray diffraction techniques together with statistical analysis of atomic force microscope …

In the grinding process, the quality of the product in the process is affected by many factors.
In order to improve the processing quality and take into account the processing efficiency …

A theoretical model is suggested that describes the generation of partial and split
dislocations at grain boundaries in nanocrystalline metals. The ranges of parameters (such …

The wear behaviors and plastic deformation mechanisms of indium (In)-doped gallium
nitride (GaN) induced by nano-grinding are investigated in this work, which is of great …

Τhe impact of decorated dislocations on the effective thermal conductivity of GaN is
investigated by means of equilibrium molecular dynamics simulations via the Green–Kubo …

We have performed first principles simulations, based on density functional theory (DFT), to
investigate the core properties of the basal a-type screw dislocation in wurtzite gallium …

The configurations of basal stacking fault (BSF) manifolds often observed in III‐nitride alloy
epilayers, particularly InGaN, are considered herein. Using high‐resolution transmission …