Electrical transport model of silicene as a channel of field effect transistor
H Sadeghi - Journal of Nanoscience and Nanotechnology, 2014 - ingentaconnect.com
The analytical electrical transport model of the Silicene, a single layer of sp 3 bonded silicon
atoms in the honeycomb lattice structure as a channel in the field effect transistor …
atoms in the honeycomb lattice structure as a channel in the field effect transistor …
InGaAs and HfO2 based junctionless vertical double gate metal oxide semiconductor field effect transistor: Performance analysis
P Dobwal, B Santhibhushan… - … of Computational and …, 2015 - ingentaconnect.com
In the present paper, a junctionless vertical double gate Metal Oxide Semiconductor Field
Effect Transistor (JLVDGM) with InGaAs substrate and HfO2 dielectric has been proposed, to …
Effect Transistor (JLVDGM) with InGaAs substrate and HfO2 dielectric has been proposed, to …
[PDF][PDF] Phonon processes in graphene and silicon-based nanostructures
C Alexandr - 2015 - cnaa.md
Relevance and importance of the subject of the Thesis is determined by a huge interest from
both scientific and engineering community toward the nanoscale structures and materials …
both scientific and engineering community toward the nanoscale structures and materials …