Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

K Ostrikov, EC Neyts, M Meyyappan - Advances in Physics, 2013 - Taylor & Francis
The unique plasma-specific features and physical phenomena in the organization of
nanoscale soild-state systems in a broad range of elemental composition, structure, and …

Progress in solar cells from hydrogenated amorphous silicon

M Stuckelberger, R Biron, N Wyrsch, FJ Haug… - … and Sustainable Energy …, 2017 - Elsevier
Hydrogenated amorphous silicon (a-Si: H) has been used for decades—doped and as
intrinsic absorber layers—in thin-film silicon solar cells. Whereas their effiency was improved …

Light-induced activation of boron doping in hydrogenated amorphous silicon for over 25% efficiency silicon solar cells

W Liu, J Shi, L Zhang, A Han, S Huang, X Li, J Peng… - Nature Energy, 2022 - nature.com
Recent achievements in amorphous/crystalline silicon heterojunction (SHJ) solar cells and
perovskite/SHJ tandem solar cells place hydrogenated amorphous silicon (a-Si: H) at the …

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

A Descoeudres, L Barraud, S De Wolf, B Strahm… - Applied Physics …, 2011 - pubs.aip.org
Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent
passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si: H) layers …

Nonthermal plasma synthesis of semiconductor nanocrystals

U Kortshagen - Journal of Physics D: Applied Physics, 2009 - iopscience.iop.org
Semiconductor nanocrystals have attracted considerable interest for a wide range of
applications including light-emitting devices and displays, photovoltaic cells, nanoelectronic …

Tension–compression asymmetry in amorphous silicon

Y Wang, J Ding, Z Fan, L Tian, M Li, H Lu, Y Zhang… - Nature Materials, 2021 - nature.com
Hard and brittle materials usually exhibit a much lower strength when loaded in tension than
in compression. However, this common-sense behaviour may not be intrinsic to these …

Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3

TW Kim, CH Cho, BH Kim, SJ Park - Applied Physics Letters, 2006 - pubs.aip.org
Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride
films by plasma-enhanced chemical vapor deposition using SiH 4 and NH 3 as precursors …

Foundations of low-temperature plasma enhanced materials synthesis and etching

GS Oehrlein, S Hamaguchi - Plasma Sources Science and …, 2018 - iopscience.iop.org
Low temperature plasma (LTP)-based synthesis of advanced materials has played a
transformational role in multiple industries, including the semiconductor industry, liquid …

Plasma-aided nanofabrication: where is the cutting edge?

K Ostrikov, AB Murphy - Journal of Physics D: Applied Physics, 2007 - iopscience.iop.org
Plasma-aided nanofabrication is a rapidly expanding area of research spanning disciplines
ranging from physics and chemistry of plasmas and gas discharges to solid state physics …

[HTML][HTML] Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

RA Ovanesyan, EA Filatova, SD Elliott… - Journal of Vacuum …, 2019 - pubs.aip.org
The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …