Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration
K Ludwiczak, AK Da̧browska… - … Applied Materials & …, 2024 - ACS Publications
Van der Waals heterostructures open up vast possibilities for applications in optoelectronics,
especially since it was recognized that the optical properties of transition-metal …
especially since it was recognized that the optical properties of transition-metal …
[HTML][HTML] Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies
Defects in two-dimensional boron nitride (BN) are candidates for a manifold of applications,
for example, as single-photon emitters or optically addressable spin defects. However, the …
for example, as single-photon emitters or optically addressable spin defects. However, the …
Growth temperature induced changes of luminescence in epitaxial BN: from colour centres to donor–acceptor recombination
Defects play a very important role in semiconductors and only the control over the defect
properties allows the implementation of materials in dedicated applications. We present an …
properties allows the implementation of materials in dedicated applications. We present an …
Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials
P Tatarczak, J Iwański, AK Dąbrowska… - …, 2024 - iopscience.iop.org
Strain built-in electronic and optoelectronic devices can influence their properties and
lifetime. This effect is particularly significant at the interface between two-dimensional …
lifetime. This effect is particularly significant at the interface between two-dimensional …
Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy
M Tokarczyk, AK Dąbrowska, G Kowalski, R Bożek… - 2D …, 2023 - iopscience.iop.org
The substrate is one of the key components that determines the quality of the epitaxial
layers. However, the implications of growing two-dimensional layers on three-dimensional …
layers. However, the implications of growing two-dimensional layers on three-dimensional …
[HTML][HTML] Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
A common solution for precise magnetic field sensing is to employ spin-active defects in
semiconductors, with the NV center in diamond as a prominent example. However, the three …
semiconductors, with the NV center in diamond as a prominent example. However, the three …