Research into regularities of pore formation on the surface of semiconductors
A general procedure is devised to control the process of formation of porous layers on
semiconductor surfaces by the method of electrochemical etching. When controlling the …
semiconductor surfaces by the method of electrochemical etching. When controlling the …
[PDF][PDF] Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide
Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …
[HTML][HTML] Energy dependence of morphologies on photoresist surfaces under Ar+ ion bombardment with normal incidence
G Yang, D Hirsch, J Li, Y Liu, F Frost, Y Hong - Applied Surface Science, 2020 - Elsevier
The energy dependence of nanostructures on a photoresist produced by ion bombardment
(IB) under normal incidence is studied through atomic force microscopy and time-of-flight …
(IB) under normal incidence is studied through atomic force microscopy and time-of-flight …
Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing
Swift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous
structure with voids aligned along ion trajectory due to local melting and resolidification …
structure with voids aligned along ion trajectory due to local melting and resolidification …
Improvement of electrochemical supercapacitors by using nanostructured semiconductors
The paper considers ways to increase the efficiency of electrochemical supercapacitors by
using electrodes of porous semiconductors as electrodes. The technique of manufacturing …
using electrodes of porous semiconductors as electrodes. The technique of manufacturing …
Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track
The formation of nanoscale voids in amorphous-germanium (a-Ge), and their size and
shape evolution under ultra-fast thermal spikes within an ion track of swift heavy ion, is …
shape evolution under ultra-fast thermal spikes within an ion track of swift heavy ion, is …
Ion Beam Implantation Technology for Production of Thin Nanoporous Ge Layers Suited for Li-Ion Batteries
AL Stepanov, SM Khantimerov - Handbook of Energy Materials, 2022 - Springer
In the industry for the development of rechargeable Li-ion battery electrodes, thin
nanoporous Ge (PGe) layers as a promising material were increasingly considered. Various …
nanoporous Ge (PGe) layers as a promising material were increasingly considered. Various …
Thermal spike effect in sputtering of porous germanium to form surface pattern by high energy heavy ions irradiation
Germanium exhibits a remarkable effect when subjected to high energy heavy ions
irradiation. A synergic effect of high electronic energy loss (S e= 16.4 keV nm− 1) and …
irradiation. A synergic effect of high electronic energy loss (S e= 16.4 keV nm− 1) and …
Synthesis of porous germanium with silver nanoparticles by ion implantation
AL Stepanov, YN Osin, VI Nuzhdin, VF Valeev… - Nanotechnologies in …, 2017 - Springer
The synthesis of porous PGe layers with Ag nanoparticles is considered when implanted
with Ag+ ions of single-crystal c-Ge with an energy of 30 keV at a dose of 1.5× 10 17 ion/cm …
with Ag+ ions of single-crystal c-Ge with an energy of 30 keV at a dose of 1.5× 10 17 ion/cm …
Синтез пористого германия с наночастицами серебра методом ионной имплантации
АЛ Степанов, ЮН Осин, ВИ Нуждин… - Российские …, 2017 - elibrary.ru
Рассматривается синтез слоев пористого PGe с наночастицами Ag при имплантации
ионами Ag+ монокристаллического c-Ge с энергией 30 кэВ при дозе 1.5· 1017 ион/см2 и …
ионами Ag+ монокристаллического c-Ge с энергией 30 кэВ при дозе 1.5· 1017 ион/см2 и …