With the development of the times, people have higher and higher requirements for
electronic components. Thin film transistor (TFT) is an important switching device that has …

In this study, we investigated the effects of film thickness (t ch) on the radiation damage of
indium-gallium-tin oxide (IGTO) thin films and radiation tolerance of high-mobility IGTO thin …

InSnO (ITO) thin-film transistors (TFTs) attract much attention in fields of displays and low-
cost integrated circuits (IC). In the present work, we demonstrate the high-performance …

Herein, we investigated the effects of active layer thickness (tS) on the electrical
characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film …

Amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with different channel layer
thickness were fabricated on silicon wafers by radio frequency magnetron sputtering method …

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS)
stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related …

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined
in terms of their potential applications for the fabrication of transparent and flexible electronic …

Among various energy harvesting technologies, triboelectricity is an epoch-making
discovery that can convert energy loss caused by the mechanical vibration or friction of parts …

Multivalued transistors are demonstrated on wafer‐scale, sputtered gallium‐doped indium‐
zinc‐tin‐oxide (Ga‐doped IZTO) thin films by area‐selective optical doping. Cation …

In this paper, we present a threshold-voltage extraction method for zinc oxide (ZnO) thin-film
transistors (TFTs). Bottom-gate atomic-layer-deposited ZnO TFTs exhibit typical n-type …