Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

This article reviews static and dynamic interfacial effects in magnetism, focusing on
interfacially driven magnetic effects and phenomena associated with spin-orbit coupling and …

In many cases, electron counting with direct detection sensors offers improved resolution,
lower noise, and higher pixel density compared to conventional, indirect detection sensors …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Thin-film oxide heterostructures show great potential for use in spintronic memories, where
electronic charge and spin are coupled to transport information. Here we use a La0. 7Sr0 …

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with
a nanoscale electronic material in a field effect transistor structure offers the opportunity to …

Ferroelectrics hold promise for sensors, transducers, and telecommunications. With the
demand of electronic devices scaling down, they take the form of nanoscale films. However …

As a high-k material, hafnium oxide (HfO 2) has been used in gate dielectrics for decades.
Since the discovery of polar phase in Si-doped HfO 2 films, chemical doping has been …

The possibility of generating a large range of elastic strain in low-dimensional materials
offers a vast design space that has led to a plethora of scientific and technological …