A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …

GaAsP/SiGe dual-junction solar cells have been epitaxially grown on silicon substrates
which have the potential of achieving 1-sun tandem efficiencies of 40%. With the addition of …

In the search for a hybrid III-V/Si photovoltaic technology, a tandem GaAsP/SiGe solar cell
grown on silicon substrate have been developed using SiGe/Ge reverse graded buffers …

Here, we use a bottom-up approach to estimate the manufacturing costs of GaAsP/Si dual
junction (DJ) solar cells, fabricated using step-cell technology. Step-cell features facilitate …

Lattice matched and current matched GaAsP/SiGe tandem solar cells on Si have the
potential of 40% conversion efficiency [8]. A corrected three-terminal tandem efficiency of …

Abstract CaTiO 3 (CT) and α-Ag 2 WO 4 (AW) semiconductors are widely known for their
interesting electrical and photoluminescence (PL) properties. In this study, we decorated CT …

With its wide bandgap and good diode performance, GaAsP is an excellent candidate for the
top cell in a silicon-based multijunction tandem device. Even though the material is not …

We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer
layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm …

We report observations and origins of Ga-rich GaGe droplets and the localized etching of Ge-
rich GaGe thin films grown on GaAs (100) substrates by metalorganic chemical vapor …

Increasing the efficiency of a solar cell leads to the diminution of watt peak cost [1]. Among
the technologies offering a boost in efficiency, we find the multijunction solar cell. This latter …