Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

Alloying elements can substantially affect the formation and morphological stability of nickel
monosilicide. A comprehensive study of phase formation was performed on 24 Ni alloys with …

The formation processes for nickel silicide are assessed to determine limitations of using the
silicide for sub-65 nanometer technologies. Various aspects of the NiSi formation process …

We have investigated effects of C+ ion implantation into Si substrates on electrical properties
of NiSi/Si (001) contacts. Increase in sheet resistance of a NiSi layers on Si was effectively …

The Schottky barrier height (SBH) variation and its dependence on applied voltage for NiSi/n-
Si Schottky diodes with different SBH inhomogeneities have been studied by temperature …

Self-aligned silicide salicide processing is widely used in complementary metal–oxide–
semiconductor CMOS manufacturing to reduce the sheet resistance and contact resistance …

The effects of hydrogen implantation on the structural and electrical properties of nickel
silicide have been investigated. Ni films (30 nm) are electron-beam-evaporated on Si …

The thermal stability of nickel monosilicide (NiSi) is one of the important research topics in
the area of nano-complementary metal oxide semiconductor. This paper reports the effect of …

The effects of a SiO 2 capping layer on the electrical and structural properties of nickel
silicide have been investigated as a function of rapid-thermal-annealing temperature. X-ray …

The aim of this paper is to study the 1/f noise performance of n-and p-channel MOSFETs
with different Hf-based gate stacks, deposited by MOCVD and using metal (PVD TaN) as a …