Multidimensional device architectures for efficient power electronics

Y Zhang, F Udrea, H Wang - Nature electronics, 2022 - nature.com
Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …

Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

[HTML][HTML] Surface transfer doping of diamond: A review

KG Crawford, I Maini, DA Macdonald… - Progress in Surface …, 2021 - Elsevier
Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

Y Sasama, T Kageura, M Imura, K Watanabe… - Nature …, 2022 - nature.com
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages,
temperatures and frequencies with low energy losses, and are important for power and high …

Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs

H Zhang, L Yuan, X Tang, J Hu, J Sun… - … on Power Electronics, 2019 - ieeexplore.ieee.org
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …

Role of wide bandgap materials in power electronics for smart grids applications

J Ballestín-Fuertes, J Muñoz-Cruzado-Alba… - Electronics, 2021 - mdpi.com
At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …

Prospects for wide bandgap and ultrawide bandgap CMOS devices

SJ Bader, H Lee, R Chaudhuri, S Huang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

Recent advances in diamond power semiconductor devices

H Umezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

Diamond power devices: state of the art, modelling, figures of merit and future perspective

N Donato, N Rouger, J Pernot… - Journal of Physics D …, 2019 - iopscience.iop.org
With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Diamond for electronics: Materials, processing and devices

D Araujo, M Suzuki, F Lloret, G Alba, P Villar - Materials, 2021 - mdpi.com
Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …