Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …
W Hu, YX Guo - IEEE Transactions on Microwave Theory and …, 2021 - ieeexplore.ieee.org
Neural networks are widely used to build large-signal models; an appropriate network architecture is important for high model accuracy and good generalization ability. In this …
A new method is proposed for the accurate experimental characterization and fully automated extraction of compact nonlinear models for field-effect transistors (FETs). The …
D Timothe, P Marco - 2023 IEEE Energy Conversion …, 2023 - ieeexplore.ieee.org
This paper presents an accurate and parameterizable analytical modeling for Gallium Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. GaN HEMTs …