ANN-based large-signal model of AlGaN/GaN HEMTs with accurate buffer-related trapping effects characterization

X Du, M Helaoui, A Jarndal, T Liu, B Hu… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
In this article, an artificial neural network (ANN)-based large-signal model (LSM) of
AlGaN/GaN high electron mobility transistors (HEMTs) with accurate buffer-related trapping …

Trapping dynamics in GaN HEMTs for millimeter-wave applications: Measurement-based characterization and technology comparison

AM Angelotti, GP Gibiino, C Florian, A Santarelli - Electronics, 2021 - mdpi.com
Charge trapping effects represent a major challenge in the performance evaluation and the
measurement-based compact modeling of modern short-gate-length (ie,≤ 0.15 μm) Gallium …

An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trapping effects

W Hu, YX Guo - IEEE Transactions on Microwave Theory and …, 2021 - ieeexplore.ieee.org
Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …

Automatic extraction of measurement-based large-signal FET models by nonlinear function sampling

TM Martín-Guerrero, A Santarelli… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
A new method is proposed for the accurate experimental characterization and fully
automated extraction of compact nonlinear models for field-effect transistors (FETs). The …

Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design

D Timothe, P Marco - 2023 IEEE Energy Conversion …, 2023 - ieeexplore.ieee.org
This paper presents an accurate and parameterizable analytical modeling for Gallium
Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. GaN HEMTs …