Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
assembled, lens-shaped InAs quantum dots within the “linear combination of bulk bands” …
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
Intermediate band solar cells (IBSCs) fabricated to date from In (Ga) As/GaAs quantum dot
arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap …
arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap …
Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots
CA Duque, N Porras-Montenegro… - Journal of Physics …, 2006 - iopscience.iop.org
A theoretical study of the photoluminescence peak energies in InAs self-assembled
quantum dots embedded in a GaAs matrix in the presence of magnetic fields applied …
quantum dots embedded in a GaAs matrix in the presence of magnetic fields applied …
Carrier dynamics in modulation-doped quantum dots
J Siegert, S Marcinkevičius, QX Zhao - Physical Review B—Condensed Matter …, 2005 - APS
Photoexcited carrier dynamics was studied in n and p modulation-doped self-assembled In
As∕ Ga As quantum dots by means of time-resolved photoluminescence with excitation and …
As∕ Ga As quantum dots by means of time-resolved photoluminescence with excitation and …
Spin redistribution due to Pauli blocking in quantum dots
VK Kalevich, M Paillard, KV Kavokin, X Marie… - Physical Review B, 2001 - APS
We have studied electron spin dynamics in self-organized InAs/GaAs quantum dots (QD's)
by time-resolved photoluminescence (PL). The electron polarization of the QD discrete …
by time-resolved photoluminescence (PL). The electron polarization of the QD discrete …
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells
InAs/GaAs quantum dot solar cell structures have been grown by metal organic vapor phase
epitaxy, using partial capping of the quantum dots plus a subsequent thermal anneal. The …
epitaxy, using partial capping of the quantum dots plus a subsequent thermal anneal. The …
Effects of hydrostatic pressure on donor states in symmetrical GaAs–Ga0. 7Al0. 3As double quantum wells
N Raigoza, AL Morales, CA Duque - Physica B: Condensed Matter, 2005 - Elsevier
We have calculated the effects of hydrostatic pressure on the binding energies and density
of impurity states for shallow donors uniformly distributed in symmetrical GaAs-(Ga, Al) As …
of impurity states for shallow donors uniformly distributed in symmetrical GaAs-(Ga, Al) As …
Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data
Low-loss optical communication requires light sources at 1.5 mum wavelengths.
Experiments showed, without much theoretical guidance, that InAs/GaAs quantum dots …
Experiments showed, without much theoretical guidance, that InAs/GaAs quantum dots …
Prediction of total antioxidant activity of Prunella L. species by automatic partial least square regression applied to 2-way liquid chromatographic UV spectral images
Four different data representations were evaluated for the determination of the total
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …
Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was
investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the …
investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the …