Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability
design and assessment. In this paper, an electrothermal model for large signal equivalent …

A comprehensive large-signal MESFET model that provides a realistic description of
measured characteristics over all operating regions is presented, It describes subthreshold …

The derivative structure of the characteristics of GaAs FET's naturally gives rise to changes
in magnitude and reversals of phase of intermodulation distortion components. An MMIC …

A pulsed measurement system can provide more than just isothermal characteristic data. An
off-the-shelf system can determine rapidly the timing necessary for both pulsed-IV and …

(STAG) compact model for partially depleted (PD) silicon-on-insulator (SOI) MOSFETs is
presented. The model uses a single expression to model the channel current, thereby …

The variation of high electron-mobility transistor (HEMT) large-signal behavior with a change
in operating condition is examined with a view to understanding the dynamics involved and …

The field-effect transistor (FET) has just three terminals. One is a gate that controls current
flowing between the source and drain terminals. It is simple enough, and so widely accepted …

In this paper, the Southampton Thermal AnaloGue (STAG) compact model for partially
depleted (PD) silicon-on-insulator (SOI) MOSFETs is presented. The model uses a single …

This paper provides new insight into the cause of subharmonic generation in GaAs MESFET
power amplifiers under severe output mismatch conditions. A nonlinear modeling …

Novel circuit synthesis technique using short channel GaAs FETs giving reduced
intermodulation distortion Page 1 CIRCUIT SYNTHESIS TECHNIQUE USING SHORT …