Extraction of packaged GaN power transistors parasitics using S-parameters
In order to better predict the high-frequency switching operation of transistors in power
converters, parasitic elements of these devices such as resistances, inductances, and …
converters, parasitic elements of these devices such as resistances, inductances, and …
An improved large signal model for 0.1 μm AlGaN/GaN high electron mobility transistors (HEMTs) process and its applications in practical monolithic microwave …
J Li, S Mao, Y Xu, X Zhao, W Wang, F Guo, Q Zhang… - Micromachines, 2018 - mdpi.com
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility
transistor (HEMT) process is proposed in this paper. The short channel effect including the …
transistor (HEMT) process is proposed in this paper. The short channel effect including the …
A ultra-wideband empirical large-signal model for AlGaAs/GaAs HEMTs
Y Jia, Y Xu, X Zhao, C Wang - … and Processes for RF and THz …, 2016 - ieeexplore.ieee.org
An accurate large-signal GaAs HEMT modeling is very important for microwave and
millimeter wave power MMIC amplifier design. This paper presents a complete GaAs HEMT …
millimeter wave power MMIC amplifier design. This paper presents a complete GaAs HEMT …
A method to determine wide bandgap power devices packaging interconnections
L Pace, N Defrance, JC De Jaeger… - 2019 IEEE 23rd …, 2019 - ieeexplore.ieee.org
Wide Bandgap (WBG) power devices show very good characteristics for high frequency
operation in power converters, leading to a better power integration by reducing size and …
operation in power converters, leading to a better power integration by reducing size and …
[PDF][PDF] Modélisation distribuée et évolutive du GaN HEMT
MH Maher - 2020 - academia.edu
L'industrie de télécommunication et les satellites se base majoritairement sur les
technologies Si et GaAs. La demande croissante des hauts débits de données entraine une …
technologies Si et GaAs. La demande croissante des hauts débits de données entraine une …
[PDF][PDF] Extraction of Access Parasitics of Packaged GaN Power Transistors Using S-Parameters
In order to better predict the high frequency switching operation of transistors in power
converters, the access elements of these devices like resistances and inductances must be …
converters, the access elements of these devices like resistances and inductances must be …
S-parameters characterization of GaN power transistors for high frequency power converters design
Gallium Nitride (GaN) power devices that have been developed these recent years are
ideals candidates for high frequency power conversion, leading to a reduction of size, cost …
ideals candidates for high frequency power conversion, leading to a reduction of size, cost …