A novel prototyping method for die-level monolithic integration of MEMS above-IC

PV Cicek, Q Zhang, T Saha, S Mahdavi… - Journal of …, 2013 - iopscience.iop.org
This work presents a convenient and versatile prototyping method for integrating surface-
micromachined microelectromechanical systems (MEMS) directly above IC electronics, at …

Self-assembly of three-dimensional Au inductors on silicon

ME Kiziroglou, AG Mukherjee, S Vatti, AS Holmes… - IET microwaves, antennas …, 2010 - IET
Integration of inductors into high-frequency silicon circuits currently comes at the expense of
a low-quality factor (Q), mainly because of electromagnetic interactions with the underlying …

A novel technique for die-level post-processing of released optical MEMS

MY Elsayed, PO Beaulieu, J Briere… - Journal of …, 2016 - iopscience.iop.org
This work presents a novel die-level post-processing technique for dies including released
movable structures. The procedure was applied to microelectromechanical systems (MEMS) …

Design, fabrication, and complementary metal-oxide-semiconductor (CMOS) integration of micro-electro-mechanical systems (MEMS) humidity sensors

T Saha - 2013 - escholarship.mcgill.ca
La conception, le microfabrication, et l'intégration de CMOS des sondes capacitives micro-
électro-mécaniques d'humidité des systèmes (MEMS) sont présentés dans ce travail …

[PDF][PDF] CMOS integration of AlN based piezoelectric microcantilevers

AP Campos - 2015 - oa.upm.es
The huge growth of MEMS (Micro Electro Mechanical Systems) as well as their presence in
most of our daily used devices aroused our interest on them. At the same time, CMOS …

CMOS integration of AlN based piezoelectric microcantilevers

A Pérez Campos - 2015 - oa.upm.es
El gran crecimiento de los sistemas MEMS (Micro Electro Mechanical Systems) así como su
presencia en la mayoría de los dispositivos que usamos diariamente despertó nuestro …

[PDF][PDF] Self-assembly of three-dimensional Au inductors on silicon

MEKAGMS Vatti, AS Holmes, CPEM Yeatman - 2010 - academia.edu
Integration of inductors into high-frequency silicon circuits currently comes at the expense of
a low-quality factor (Q), mainly because of electromagnetic interactions with the underlying …