The IV–IV binary alloy, Si–Ge, has attracted incredible attention for its superior performances
in multiple disciplines, especially in high temperature thermoelectric and BICMOS …

Semiconductor substrates with variable band gaps and lattice constants are key enables for
advanced electronic, optoelectronic and photovoltaic devices. Some of the recent advances …

The article presents a study for liquid phase diffusion (LPD) growth of compositionally
graded, germanium-rich SixGe1− x single crystals of 25mm in diameter for use as lattice …

A component distribution in Ge-rich Ge–Si single crystals grown under the continuous
feeding of the melt with the second component (Si) has been analyzed theoretically and …

A SiGe bulk crystal with uniform composition was successfully fabricated by clarifying and
controlling the growth parameters at the crystal–melt interface. An apparatus was developed …

The effect of the supply of depleted Si solute elements on the compositional variation in the
Si-rich SiGe bulk crystals was studied using the method which was used to grow Ge-rich …

The article presents the results of a numerical simulation study conducted to examine the
effect of static and rotating magnetic fields on the growth process of SiGe single crystals by …

In this article, we present a computational model for the growth of SixGe1− x single crystals
by Liquid Phase Diffusion (LPD) from the germanium-rich side of the binary SixGe1− x …

We report on a simple liquid-phase epitaxy (LPE) of SiGe on Si (100) substrate based on
printing and firing. LPE was performed using an Al–Ge mixed paste screen-printed on a Si …

An optically curved device is presented for use in focusing or imaging x-rays from a
divergent source. The device includes a plurality of curved atomic reflection planes, at least …