Identification of Si and O donors in hydride-vapor-phase epitaxial GaN
WJ Moore, JA Freitas Jr, GCB Braga, RJ Molnar… - Applied Physics …, 2001 - pubs.aip.org
Donor impurity excitation spectra in the infrared from two high-quality, not-intentionally
doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed …
doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed …
Calculation of shallow donor levels in GaN
H Wang, AB Chen - Journal of Applied Physics, 2000 - pubs.aip.org
The energy levels of shallow substitutional donors in GaN are calculated in an effective-
mass theory that includes the effects of mass anisotropy, central-cell potential correction …
mass theory that includes the effects of mass anisotropy, central-cell potential correction …
Theory of moiré localized excitons in transition metal dichalcogenide heterobilayers
Transition-metal dichalcogenide heterostructures exhibit moiré patterns that spatially
modulate the electronic structure across the material's plane. For certain material pairs, this …
modulate the electronic structure across the material's plane. For certain material pairs, this …
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
The neutral donor bound exciton recombination processes in freestanding GaN have been
studied. The photoluminescence spectrum shows emission lines related to silicon and …
studied. The photoluminescence spectrum shows emission lines related to silicon and …
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
MA Reshchikov, D Huang, F Yun, L He… - Applied Physics …, 2001 - pubs.aip.org
Photoluminescence (PL) studies were performed on a 1.5-μm-thick GaN layer grown by
molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride …
molecular-beam epitaxy on a freestanding GaN template that in turn was grown by hydride …
Donor impurity effects on optical properties of GaN/AlN constant total effective radius multishell quantum dots
In the current work, we have studied the effect of a single donor impurity confined within
GaN/AlN constant total effective radius multishell quantum dots (CTER-MSQDs) on optical …
GaN/AlN constant total effective radius multishell quantum dots (CTER-MSQDs) on optical …
Terahertz emission upon the interband excitation of GaN layers
AO Zakhar'in, AV Bobylev, AV Andrianov - Semiconductors, 2012 - Springer
The experimental observation and study of terahertz photoluminescence upon the steady-
state interband excitation of epitaxial n-GaN (Si) layers are reported. The properties of the …
state interband excitation of epitaxial n-GaN (Si) layers are reported. The properties of the …
Study of defect levels in the band gap for a thick InGaN film
Deep-level transient spectroscopy, thermal admittance spectroscopy (TAS), and deep-level
optical spectroscopy techniques have been used to investigate the defect levels in the band …
optical spectroscopy techniques have been used to investigate the defect levels in the band …
Critical concentration for the doping-induced metal–nonmetal transition in cubic and hexagonal GaN
A Ferreira da Silva, C Persson - Journal of applied physics, 2002 - pubs.aip.org
The critical concentration for the metal–nonmetal transition has been calculated for n-type
and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three …
and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three …
Simulation of doping levels and deep levels in InGaN-based single-junction solar cell
S Lin, S Zeng, X Cai, J Zhang, S Wu, L Sun… - Journal of Materials …, 2012 - Springer
Doping levels and deep levels in In 0.65 Ga 0.35 N single junction solar cells are studied
theoretically, and simulation of cell properties is performed. Effective-mass approximation …
theoretically, and simulation of cell properties is performed. Effective-mass approximation …