3-D technology provides many benefits including high density, high bandwidth, low-power,
and small form-factor. Through Silicon Via (TSV), which provides communication links for …

Deep sub-micron technologies employ dummy metal fills in the interconnect layouts with
adequate pre-CMP pattern density distribution to achieve post-CMP planarization. Dummy …

Chip surface topography after chemical-mechanical polishing (CMP) process is greatly
influenced by the layout geometric characteristics, such as line width and line space. In …

A fill-placement method, according to which symmetrical fill patterns are used to insert fill
tiles into one or more interconnect levels corresponding to symmetrical circuitry. The fill …

Metal fill patterning in modern IC processes is often viewed as parasitics to be minimized.
Here, we use metal fills to improve isolation. The improved isolation comes at the cost of …

Topography variation has a significant impact on performance as well as printability for
nanometer technologies. In this paper, we propose an improved full-chip routing system for …

Designing digital circuits for sub-100nm bulk CMOS technology faces many challenges in
terms of Process, Voltage, and Temperature variations. The focus has been on interdie …

Modern IC processes require metal fill patterning to achieve global uniformity of the
metallization/oxide layers. Electrically these fills are often viewed as parasitics to be …

Very deep sub-micron integrated circuit manufacturing is an expensive and technologically
challenging endeavor, with top-of-the-line fabrication lines going into the billions of dollars in …

In this study, structural variations and overlay errors caused by multiple patterning
lithography techniques to print narrow parallel metal interconnects are investigated …