Tuning supercurrent in Josephson field-effect transistors using h-BN dielectric
Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring
mesoscopic and topological superconductivity. A unique property of Josephson junction …
mesoscopic and topological superconductivity. A unique property of Josephson junction …
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
N Taoka, M Yokoyama, SH Kim… - 2011 International …, 2011 - ieeexplore.ieee.org
We clarified that Fermi levels at InGaAs MOS interfaces are pinned inside conduction band
(CB) and that this pinning severely degrades the effective mobility. Also, the energy position …
(CB) and that this pinning severely degrades the effective mobility. Also, the energy position …
Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx
III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent
candidates for high-power, radio-frequency (rf) and high-temperature applications. However …
candidates for high-power, radio-frequency (rf) and high-temperature applications. However …
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors
N Taoka, M Yokoyama, S Hyeon Kim, R Suzuki… - Applied Physics …, 2013 - pubs.aip.org
Combining the split capacitance-voltage method with Hall measurements revealed the
existence of interface traps within the conduction band (CB) of InGaAs in metal-oxide …
existence of interface traps within the conduction band (CB) of InGaAs in metal-oxide …
Electron Transport in Multigate InxGa1–x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature
The III–V semiconductors such as In x Ga1-x As (x= 0.53–0.70) have attracted significant
interest in the context of low power digital complementary metal-oxide-semiconductor …
interest in the context of low power digital complementary metal-oxide-semiconductor …
Low-resistance TiAl3/Au ohmic contact and enhanced performance on AlGaN/GaN HEMT
T Xu, J Zhang, Z Yang, J Wang, Q Li, Y Zhang… - Applied Surface …, 2024 - Elsevier
The advent of an era characterized by intelligent, interconnected systems of AlGaN/GaN
High Electron Mobility Transistors (HEMTs) electronic devices is underway. Within this …
High Electron Mobility Transistors (HEMTs) electronic devices is underway. Within this …
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in Metal–Oxide–Semiconductor Field …
N Taoka, M Yokoyama, SH Kim… - … on Device and …, 2013 - ieeexplore.ieee.org
We have quantitatively evaluated the interface trap density inside the conduction band (CB)
of In_xGa_1-xAs metal–oxide–semiconductor (MOS) structures and have systematically …
of In_xGa_1-xAs metal–oxide–semiconductor (MOS) structures and have systematically …
Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks
R Zhang, X Yu, M Takenaka… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The impact of postdeposition annealing (PDA) ambient on electrical properties of thin
equivalent oxide thickness (EOT) Al 2 O 3/GeO x/Ge gate-stacks is investigated. It is found …
equivalent oxide thickness (EOT) Al 2 O 3/GeO x/Ge gate-stacks is investigated. It is found …
Analysis of effective mobility and hall effect mobility in high-k based In0. 75Ga0. 25As metal-oxide-semiconductor high-electron-mobility transistors
We report an In 0.75 Ga 0.25 As metal-oxide-semiconductor high-electron-mobility transistor
with a peak Hall mobility of 8300 cm 2/Vs at a carrier density of 2× 10 12 cm− 2. Comparison …
with a peak Hall mobility of 8300 cm 2/Vs at a carrier density of 2× 10 12 cm− 2. Comparison …
Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces
T Gougousi, L Ye - The Journal of Physical Chemistry C, 2012 - ACS Publications
Ta2O5 films were deposited on GaAs (100) surfaces using thermal atomic layer deposition
from pentakis dimethyl amino tantalum (PDMAT) and H2O. The interface between the films …
from pentakis dimethyl amino tantalum (PDMAT) and H2O. The interface between the films …