Active mode locking by monolithic lasers with integrated electroabsorption modulators using
strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator …

By focused ion beam implantation induced thermal intermixing the bandgap of quantum-well
layer structures can be selectively changed. This allows lateral bandgap engineering and …

This paper describes picosecond pulse generation at 20 Gb/s by monolithic mode-locked
lasers integrated with electroabsorption modulators and distributed Bragg reflectors. The …

Active mode-locking of semiconductor lasers 1, 2 is the most promising technique for
generating the electrical-clock-driven short-optical-pulses required in ultra-high bit rate …

Strained layer InGaAs/GaAs quantum wells have been grown by molecular-beam epitaxy on
patterned (100) GaAs substrates. Indium migration away from the facets of patterned mesas …

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for
use in optical communication systems. The properties of pulse sources and characterization …

Traditional techniques for measuring the chirp in external modulators assume that the
optical intensity output of the modulator is a faithful representation of the applied voltage. For …

We have studied the blue shift in photoluminescence emission energy of pseudomorphic
InGaAs/GaAs quantum wells grown on patterned (001) GaAs substrates with grooves and …

Generation of high-speed optical pulses is an important technology for not only optical data
transmission/processing, but also optical subcarrier transmission in wireless-access …

This article reviews the role of molecular beam epitaxy (MBE) in the field of optoelectronics.
In the past 25 years, this crystal growth technology has helped researchers to investigate …