TSVs in 3D integrated circuits are a source of noise that can affect nearby transistor
performance. So an analytical physics-based model of the TSV-to-substrate coupling is …

In this paper, we present an analysis of signal transfer performance of the through glass via
(TGV) deposited with metal electrodes. Because of the parasitical effects, signal will be …

The semiconductor industry's rapid advancement pushes conventional two-dimensional
technology to its utmost limitations in terms of scaling, performance, and cost factors. These …

A wireless type of chip-to-chip communication (WCC) technology is proposed as the next
generation of 3D semiconductor technology. To demonstrate the feasibility of this …

3D chip stacking is considered known to overcome conventional 2D-IC issues, using
through silicon vias to ensure vertical signal transmission. From any point source …

This paper presents the modelling and analysis of the encapsulation process for three-
dimensional (3D) stacking-chip package with through-silicon via (TSV) integration. The fluid …

L'intégration tridimensionnelle (3D), où plusieurs puces sont empilées et interconnectées,
est en train de révolutionner l'industrie des semi-conducteurs. Cette technologie permet …

This paper presents the results obtained from the simulation of TSV structures in face-to-
back stacked dice. A novel simulation tool enabling device and electromagnetic (EM) co …

Ces dernières années ont vu l'émergence d'un nouveaux concept dans le domaine de la
microélectronique pour répondre aux besoins grandissant en termes de performances et …

The rapid pace of improvement of semiconductor industry drives the traditional 2D
technology to reach its limits in regard of performance, scaling and cost criteria. These …