Abstract Epitaxial TiN films on (100) Si have been realized by reactive pulsed laser
deposition (PLD). Their utility is demonstrated by subsequent growth of epitaxial BaTiO 3 …

HfO 2 thin film is deposited on p-Si substrates by RF magnetron sputtering apparatus and
annealed at 750° C for 10 min with O 2 atmosphere. Spectral analysis shows that HfO 2 thin …

Silicide materials used as contacts in CMOS devices have evolved over many technology
nodes. This article traces the often forgotten defectivity related reasons that were the primary …

Diffusion mediated interaction in metal-substrate assembly during high temperature
annealing leads to possible formation of new composite materials. Here, sputtered grown Ti …

Nanosheet field effect transistors (NS-FET) are a most promising candidate for next-
generation semiconductor devices for sub-7-nm technology nodes. This work explores a two …

The increasing amount of silicon waste generated from the rapid developing photovoltaic
industry calls for an economical silicon recycling process. The present work proposes a …

Based on the quasi-3D potential approach, quasi-3D scaling theory, drift-diffusion model,
and equivalent flat-band shift, a new subthreshold current model caused by the interface …

Teleportation is a new age budding technology that is both ground-breaking and advanced.
Through teleportation, it aims to transmit information across channels without taking the help …

(57) ABSTRACT A method for forming a semiconductor device, the method including:
providing a substrate with at least one fin or nanowire; forming a dummy gate; providing …