State of the art sub-terahertz switching solutions

J Sobolewski, Y Yashchyshyn - IEEE Access, 2022 - ieeexplore.ieee.org
In this paper the state of the art in RF switches for mm-wave frequency range is summarized
and evaluated. Several leading technologies is presented from typical semiconductor …

Towards Passive Imaging with Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors

M Andree, J Grzyb, H Rúcker… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This work focuses on a systematic analysis of the potential and limitations of modern SiGe
HBT devices for broadband passive room-temperature detection in the lower THz range …

W 波段超外差式辐射计射频前端的设计.

刘敬, 陈振华, 王建如 - Electronic Components & Materials, 2022 - search.ebscohost.com
针对毫米波辐射计接收前端探测灵敏度低, 结构复杂, 集成度低的问题, 设计了一款用于W
波段辐射计的射频前端组件. 该组件工作于77~ 79 GHz 频段, 采用超外差一次变频接收体制 …

A W-band compact wide 1-dB bandwidth semi-lumped quadrature coupler in 65 nm CMOS

Q Lu, Y Huang, H Zhang, T Zhang, Z Zhu - Microelectronics Journal, 2024 - Elsevier
This paper presents a W-band compact semi-lumped quadrature coupler using both
distributed and lumped parametric elements for the first time. Identical with the distributed …

A 0.9 mW compact power detector with 30 dB dynamic range for automotive radar applications

H Kandis, B Gungor, M Yazici… - 2020 IEEE 63rd …, 2020 - ieeexplore.ieee.org
This work presents a power detector targeting automotive radar systems. The design
operates for both long & short-range applications. Responsivity and dynamic range were …

[PDF][PDF] NEW APPROACHES TO WIDEBAND RF SWITCHING IN SILICON-GERMANIUM TECHNOLOGY

CDY Cheon - 2021 - core.ac.uk
An SPDT switch is a fundamental building block for switch matrices [33]-[35] and front-end
T/R modules [22],[31], where isolation, linearity, transmitter output power, and receiver noise …

122 GHz SiGe BiCMOS High Resolution FMCW RADAR Front-End for Remote Sensing Applications

IB Güngör - 2020 - research.sabanciuniv.edu
RADAR systems are starting to see many new areas applications, becoming a part of our
everyday life in our automobiles, cell phones, and more. The constant advances in the …

A 6-mW w-band LNA in 0.13 µm SiGe BiCMOS for passive imaging systems

B Gungor, E Turkmen, M Yazici… - 2020 IEEE 63rd …, 2020 - ieeexplore.ieee.org
In this work, a W-band SiGe BiCMOS Low Noise Amplifier (LNA) that achieves 18 dB peak
gain at 88 GHz with 6 mW of quiescent power consumption is presented. The LNA has a …

[引用][C] 硅基毫米波高增益LNA 技术研究

卢启军, 陈野, 张涛, 朱樟明 - 雷达科学与技术, 2022