Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate
lengths of just a few nanometers have been already reported in state-of-the-art transistors. In …

Abstract An improved Monte Carlo Model of the Single Electron Transistor using the
Orthodox Theory and Master Equations is proposed in this paper. The modifications are …

Even though charge transport in semiconducting polymers is of relevance for a number of
potential applications in (opto-) electronic devices, the fundamental mechanism of how …

A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was
successfully fabricated using the bio-nano-process, advanced etching techniques, including …

Single charge electronics offer a way for disruptive technology in nanoelectronics. Coulomb
blockade is a realistic way for controlling the electric current through a device with the …

Single-hole transport in a two-dimensional Si multidot-channel field-effect transistor is
studied. It is found that the single-hole-tunneling current fluctuates in the particular ranges of …

Metallic single-electron transistors (SETs) with Nb nanodots were fabricated and their high-
frequency rectifying characteristics were evaluated. By reducing the gap size of the …

Single-electron transfer in single-gated one-dimensional quantum dot arrays is investigated
statistically from the viewpoint of robustness against parameter fluctuations. We have found …

GaN is expected to be a key material for next-generation electronics due to its interesting
properties. However, current collapse poses a challenge to the application of GaN FETs to …

Single-walled-carbon-nanotube (SWNT)-based single-electron/hole devices are fabricated
with long SWNT channel surrounded by several short SWNTs on the electrodes. The …