Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

In this review article, we describe group-III nitride laser diodes that emit light in the green
spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c …

nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by
metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that …

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly
lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor …

Single-layer AlInN films with a film thickness of approximately 300 nm were grown on a c-
plane free-standing (FS) GaN substrate by metalorganic chemical vapor deposition. The …

Nitride-based blue laser diode structures with either Al 0.83 In 0.17 N/Al 0.07 Ga 0.93 N or Al
0.87 In 0.13 N bottom claddings have been fabricated and compared to standard structures …

We investigated electron and hole accumulations at GaN/AlInN/GaN interfaces by Hall effect
measurement. The InN mole fraction and temperature dependences on the sheet carrier …

We demonstrated room-temperature pulsed-operations of GaN-based blue edge-emitting
laser diodes (LDs) with both the top and bottom AlInN cladding layers by using GaN tunnel …

Nearly lattice-matched and unintentionally doped AlInN films with low background doping
grown via metalorganic vapor phase epitaxy on GaN/sapphire are investigated. The lattice …

AlInN/GaN power diodes consisting of a p-type GaN and a 300 nm thick n-type AlInN drift
layer are demonstrated. The p–n junction is grown using metalorganic chemical vapor …