Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Semiconductor nanowires: to grow or not to grow?
PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
On-chip light sources for silicon photonics
Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …
indispensable component of silicon photonic technologies and has long been pursued …
Growth and applications of GeSn-related group-IV semiconductor materials
S Zaima, O Nakatsuka, N Taoka… - … and technology of …, 2015 - iopscience.iop.org
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Material and optical characterizations have been conducted for epitaxially grown Ge 1− x Sn
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
[HTML][HTML] Diffusion of n-type dopants in germanium
A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …
material for nanoelectronic applications. Germanium has advantageous materials …
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
P Moontragoon, Z Ikonić… - … science and technology, 2007 - iopscience.iop.org
Alloys of silicon (Si), germanium (Ge) and tin (Sn) are continuously attracting research
attention as possible direct band gap semiconductors with prospective applications in …
attention as possible direct band gap semiconductors with prospective applications in …
GeSn pin photodetector for all telecommunication bands detection
Using a 820 nm-thick high-quality Ge_0. 97Sn_0. 03 alloy film grown on Si (001) by
molecular beam epitaxy, GeSn pin photodectectors have been fabricated. The detectors …
molecular beam epitaxy, GeSn pin photodectectors have been fabricated. The detectors …
[HTML][HTML] Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
The absorption coefficient and refractive index of Ge 1− x Sn x alloys (x from 0% to 10%)
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …