Standards for the characterization of endurance in resistive switching devices

M Lanza, R Waser, D Ielmini, JJ Yang, L Goux… - ACS …, 2021 - ACS Publications
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …

Variability in resistive memories

JB Roldán, E Miranda, D Maldonado… - Advanced Intelligent …, 2023 - Wiley Online Library
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Hybrid 2D–CMOS microchips for memristive applications

K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng… - Nature, 2023 - nature.com
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

ReRAM: History, status, and future

Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …

Memory materials and devices: From concept to application

Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu… - InfoMat, 2020 - Wiley Online Library
Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

P Noé, C Vallée, F Hippert, F Fillot… - … Science and Technology, 2017 - iopscience.iop.org
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design

PY Chen, S Yu - IEEE Transactions on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we present a compact model for metal-oxide-based resistive random access
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

A Mehonic, AL Shluger, D Gao, I Valov… - Advanced …, 2018 - Wiley Online Library
Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …