Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing …
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven …
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s …
Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu… - InfoMat, 2020 - Wiley Online Library
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data …
This review addresses resistive switching devices operating according to the bipolar valence change mechanism (VCM), which has become a major trend in electronic materials …
P Noé, C Vallée, F Hippert, F Fillot… - … Science and Technology, 2017 - iopscience.iop.org
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical …
PY Chen, S Yu - IEEE Transactions on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …
Interest in resistance switching is currently growing apace. The promise of novel high‐ density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …