High-density integration of uniform sub-22 nm silicon nanowires for transparent thin film transistors on glass
W Liao, Y Zhang, D Li, J Wang, L Yu - Applied Surface Science, 2025 - Elsevier
Ultrathin catalytical silicon nanowires (SiNWs), grown as orderly arrays upon glass
substrates, are ideal 1D channels for the construction of high-performance field effect …
substrates, are ideal 1D channels for the construction of high-performance field effect …
Understanding electromigration failure behaviors of narrow cobalt lines and the mechanism of reliability enhancement for extremely dilute alloying of manganese …
JS Fang, GS Chen, CC Chang, CN Hsiao… - Journal of Alloys and …, 2024 - Elsevier
Self-forming barriers for copper (Cu) interconnect metallization are well developed.
However, the self-forming-barrier process and associated electromigration behaviors of …
However, the self-forming-barrier process and associated electromigration behaviors of …
Impact of UV annealing on the hole effective mobility in SnO pFET
Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric,
nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/Vs at low hole …
nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/Vs at low hole …
Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs
BJ Shih, YM Pan, HT Chung, NC Lin… - Japanese Journal of …, 2024 - iopscience.iop.org
In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique
designed for the precise fabrication of single-crystal islands (SCIs) intended for use in …
designed for the precise fabrication of single-crystal islands (SCIs) intended for use in …