In this paper, a new high-/spl kappa/dielectric CoTiO/sub 3/has been investigated for the first
time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors …

Silicon dioxide (SiO2) layers with a thickness more than 10 nm can be formed at $120 C by
direct Si oxidation with nitric acid (HNO3). Si is initially immersed in 40 wt.% HNO3 at the …

Electrical characteristics and physical properties of 8–10 nm silicon dioxide (SiO 2) films
formed on Si (100) substrates by use of the nitric acid oxidation of Si method at∼ 120 C …

Silicon dioxide (SiO2) layers with a thickness more than 10nm can be formed at∼ 120° C by
direct Si oxidation with nitric acid (HNO3). Si is initially immersed in 40wt.% HNO3 at the …

We have developed low temperature formation methods of SiO2 layers which are applicable
to gate oxide layers in thin film transistors (TFT) by use of nitric acid (HNO3). Thick (> 10nm) …

Si can be oxidized at temperatures between 350 and 500 C by use of nitric acid (HNO 3)
vapor, resulting in 5–10 nm Si O 2∕ Si structure. The oxidation kinetics follows a parabolic …

The properties of charge states in metal–oxide-semiconductor (MOS) system are important
for the quality of the device containing ultrathin oxide layers. In present study the MOS …

We have developed a fabrication method of a relatively thick (ie, 3–8 nm) structure at by
using 70 wt% nitric acid solutions that contain polysilazane films. The plot of the etching rate …

This study presents a combined scheme of rapid thermal annealing (RTA) and multi-channel
structure for improving the performance of polycrystalline silicon (poly-Si) thin film transistors …

A low temperature (≦ 120 C) fabrication method to form relatively thick SiO 2/Si structure
with a Si source has been developed using the advanced nitric acid oxidation of Si (NAOS) …