Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Q Cai, H You, H Guo, J Wang, B Liu, Z Xie… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

Research progress of AlGaN-based deep ultraviolet light-emitting diodes

R Xu, Q Kang, Y Zhang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire

K Sato, S Yasue, K Yamada, S Tanaka… - Applied Physics …, 2020 - iopscience.iop.org
An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse
operation. The laser diode has a lattice-relaxed Al 0.6 Ga 0.4 N layer from the underlying …

The road ahead for ultrawide bandgap solar-blind UV photodetectors

A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

L Zhang, F Xu, J Wang, C He, W Guo, M Wang… - Scientific reports, 2016 - nature.com
We report epitaxial growth of AlN films with atomically flat surface on nano-patterned
sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality …

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

H Chang, Z Chen, W Li, J Yan, R Hou, S Yang… - Applied Physics …, 2019 - pubs.aip.org
We report the growth of high-quality AlN films on nano-patterned sapphire substrates
(NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid …

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

D Lee, JW Lee, J Jang, IS Shin, L Jin, JH Park… - Applied Physics …, 2017 - pubs.aip.org
We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with
periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and …

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

F Mehnke, C Kuhn, M Guttmann, C Reich… - Applied Physics …, 2014 - pubs.aip.org
The design and Mg-doping profile of AlN/Al 0.7 Ga 0.3 N electron blocking heterostructures
(EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below …

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

J Yan, J Wang, Y Zhang, P Cong, L Sun, Y Tian… - Journal of Crystal …, 2015 - Elsevier
In this article, we report the growth of high-quality AlN film using metal-organic vapor phase
epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high …

External quantum efficiency of 6.5% at 300 nm emission and 4.7% at 310 nm emission on bare wafer of AlGaN-based UVB LEDs

MA Khan, Y Itokazu, N Maeda, M Jo… - ACS Applied …, 2020 - ACS Publications
As per the Minamata Convention on Mercury, regulation on mercury use will be stricter from
the year of 2020, and safe AlGaN-based ultraviolet (UV) light sources are urgently needed …