In this work, the insertion of AlScN ferroelectric gate dielectric on the performance of the
AlGaN/GaN HEMT device is investigated. With negative pre-poling on AlScN, the threshold …

In order to meet the application requirements of radar networks for high efficiency and high
second harmonic suppression (SHS) of power amplifiers, this paper proposes a C-band 30 …

Thermal characterization of modern microwave power transistors such as high electron-
mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for …

This work is for the first time an experimental study of thermal characteristics of an copper
gravity heat pipe (thermosyrhon) with an outer diameter of 12 mm and a length of 230 mm …

A power amplifier (PA) is the core module of the wireless communication system. The
change of its specification directly affects the system's performance and may even lead to …

The amplifier is a key component of the radio frequency (RF) front-end, and its specifications
directly determine the performance of the system in which it is located. Unfortunately …

Al 2 O 3 is a broadly employed dielectric material in GaN high electron mobility transistors.
Nevertheless, at the Al 2 O 3/GaN interface, numerous traps induced by nonidealities of the …

This article presents a comprehensive design framework and realization approach for a
state-of-the-art, compact, ultra-lightweight, highly efficient, cost-effective S-band gallium …

In this work, we propose a novel triple field-plated high-electron-mobility-transistor (HEMT)
for high power applications, achieving a breakdown voltage of 2449 V. Unique structural …

A high-efficiency uniform/selective heating microwave oven was developed. Because the
power amplifier requires high-efficiency characteristics to function as a microwave source, a …