Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches

K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg - IEEE Access, 2020 - ieeexplore.ieee.org
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

A digital twin based estimation method for health indicators of DC–DC converters

Y Peng, S Zhao, H Wang - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
This article proposes a health indicator estimation method based on the digital-twin concept
aiming for condition monitoring of power electronic converters. The method is noninvasive …

A fast IGBT junction temperature estimation approach based on ON-state voltage drop

Y Yang, Q Zhang, P Zhang - IEEE Transactions on Industry …, 2020 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) module is the most widely used power electronic
device in converters. Condition monitoring of IGBT is critical for avoiding sudden failures …

Extreme learning machine optimized by whale optimization algorithm using insulated gate bipolar transistor module aging degree evaluation

LL Li, J Sun, ML Tseng, ZG Li - Expert Systems with Applications, 2019 - Elsevier
This study focuses on the aging evaluation of Insulated gate bipolar transistor (IGBT)
modules to ensure their stability during operation. An aging degree evaluation model is …

Online junction temperature measurement for SiC MOSFET based on dynamic threshold voltage extraction

X Jiang, J Wang, H Yu, J Chen, Z Zeng… - … on Power Electronics, 2020 - ieeexplore.ieee.org
The online junction temperature monitoring of power devices is a viable technique to ensure
the reliable operation of mission-critical power electronic converters. This article provides a …

Gate–emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules

R Mandeya, C Chen, V Pickert… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper proposes a novel health-sensitive parameter, called the gate-emitter pre-
threshold voltage VGE (pre-th), for detecting IGBT chip failures in multichip IGBT power …

A novel converter-level IGBT junction temperature estimation method based on the bus voltage ringing

Y Yang, P Zhang - IEEE Transactions on Power Electronics, 2021 - ieeexplore.ieee.org
Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for
converter's healthy management and condition monitoring. However, most conventional …

In Situ Insulated Gate Bipolar Transistor Junction Temperature Estimation Method via a Bond Wire Degradation Independent Parameter Turn-OFF Vce Overshoot

Y Yang, P Zhang - IEEE Transactions on Industrial Electronics, 2020 - ieeexplore.ieee.org
Fast and accurate online monitoring of junction temperature of insulated gate bipolar
transistor (IGBT) chips is of great significance for overtemperature protection and thermal …

Comparison of TSEP performances operating at homogeneous and inhomogeneous temperature distribution in multichip IGBT power modules

C Chen, V Pickert, B Ji, C Jia… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Temperature sensitive electrical parameters (TSEPs) are used to determine the chip
temperature of a single-chip insulated gate bipolar transistors (IGBT) power module by …

General reference model and overall frameworks for green manufacturing

X Zhang, X Ming, Z Liu, Y Qu, D Yin - Journal of Cleaner Production, 2019 - Elsevier
With the increasingly serious problems of environmental impact and excessive consumption
of production resources brought about by industrial development, enterprises pay more and …