P Politi, G Grenet, A Marty, A Ponchet, J Villain - Physics Reports, 2000 - Elsevier
When growing a crystal, a planar front is desired for most of the applications. This plane shape is often destroyed by instabilities of various types. In the case of growth from a …
Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film growth on a crystalline substrate of the same material. Because of the absence of misfit …
K Bellmann, UW Pohl, C Kuhn, T Wernicke… - Journal of Crystal …, 2017 - Elsevier
Homoepitaxy on vicinal surfaces may proceed by either step-flow or step-bunching growth. This surface morphology transition is correlated with the inverse Ehrlich-Schwoebel barrier …
J Krug - Physica A: Statistical Mechanics and its Applications, 2002 - Elsevier
Several aspects of the theory of epitaxial crystal growth from atomic or molecular beams are developed from the perspective of statistical physics. Lectures are devoted to the rate …
A nonlinear evolution equation for a vicinal surface growing in the step flow mode is derived in the limit of weak desorption. This limit turns out to be singular, and nonlinearities of …
S Stoyanov, V Tonchev - Physical Review B, 1998 - APS
Electromigration affected sublimation is a complicated phenomenon, involving surface transport coupled to a process of atom exchange between the two-dimensional gas of …
M Rost, P Šmilauer, J Krug - Surface Science, 1996 - Elsevier
Epitaxial growth on a vicinal surface in the step flow regime, where the diffusion length exceeds the step spacing, is studied by simulation of a continuum equation and a solid-on …
M Sato, M Uwaha, Y Saito - Physical Review B, 2000 - APS
We theoretically study step wandering and step bunching induced by the drift of adatoms with attention to the permeability of steps. The critical drift velocity to induce the instability is …
We demonstrate that the thickness uniformity of chemical vapor deposited graphene monolayers strongly depends on the pre-annealing conditions of the copper foils used as …