[HTML][HTML] InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes
GF Yang, Q Zhang, J Wang, YN Lu, P Chen, ZL Wu… - Reviews in Physics, 2016 - Elsevier
Abstract Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …
Recombination pathways in green InGaN/GaN multiple quantum wells
This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN
multiple quantum well (MQW) light-emitting diode (LED) with green emission …
multiple quantum well (MQW) light-emitting diode (LED) with green emission …
Carriers' localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311) A-and (311) B-InP substrates
We present a photoluminescence (PL) study of the optical properties in In 0.513 Al 0.487
As/InP heterostructures grown on (311) A-and (311) B-InP substrates. The exciton …
As/InP heterostructures grown on (311) A-and (311) B-InP substrates. The exciton …
Semipolar () InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate
The epitaxial growth of InGaN/GaN light-emitting diodes (LEDs) with high-indium (In) content
on Si (100) substrate faces significant challenges. The study described in this paper focuses …
on Si (100) substrate faces significant challenges. The study described in this paper focuses …
A systematic exploration of InGaN/GaN quantum well-based light emitting diodes on semipolar orientations
A Das - Optics and Spectroscopy, 2022 - Springer
Light-emitting diodes (LEDs) based on group III-nitride semiconductors (GaN, AlN, and InN)
are crucial elements for solid-state lighting and visible light communication applications. The …
are crucial elements for solid-state lighting and visible light communication applications. The …
Carrier localization in In0. 21Ga0. 79As/GaAs multiple quantum wells: a modified Pässler model for the S-shaped temperature dependence of photoluminescence …
I Fraj, T Hidouri, F Saidi, H Maaref - Superlattices and Microstructures, 2017 - Elsevier
The optical properties of In 0.21 Ga 0.79 As/GaAs MQWs, with triple unequal layer thickness
NW (3 nm), MW (6 nm) and WW (9 nm) grown on (001) and (113) GaAs substrates, is …
NW (3 nm), MW (6 nm) and WW (9 nm) grown on (001) and (113) GaAs substrates, is …
[HTML][HTML] 蓝光激光器结构中InGaN/GaN 多量子阱界面效应的精细光致发光光谱研究
王滔， 刘建勋， 葛啸天， 王荣新， 孙钱… - … and Spectral Analysis, 2022 - opticsjournal.net
摘要金属有机化学气相沉积(MOCVD) 方法制备InGaN/GaN 多量子阱结构时, 在GaN
势垒层生长的N 2 载气中引入适量H 2, 能够有效改善阱/垒界面质量从而提升发光效率 …
势垒层生长的N 2 载气中引入适量H 2, 能够有效改善阱/垒界面质量从而提升发光效率 …
Photoluminescence Dynamics in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
T Lin, ZC Feng - Handbook of Solid-State Lighting and LEDs, 2017 - taylorfrancis.com
The recent researches referring to InGaN/GaN multiple quantum well light-emitting diodes
(MQW LEDs) mainly focused on finding ways to improve the devices' performance, for the …
(MQW LEDs) mainly focused on finding ways to improve the devices' performance, for the …
Study on optical properties of indium-graded semipolar InGaN/GaN quantum well
F Zeng, L Zhu, W Liu, W Liu, H Wang… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
The electronic and optical properties of indium-graded semipolar quantum well (QW)
structures with different indium variation schemes and well widths have been investigated by …
structures with different indium variation schemes and well widths have been investigated by …
[PDF][PDF] Reviews in Physics
GF Yang, Q Zhang, J Wang, YN Lu, P Chen, ZL Wu… - 2016 - core.ac.uk
abstract Phosphor-free InGaN/GaN multiple quantum well (MQW) white light-emitting diodes
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …
(LEDs) have the advantages of simpler device process and potentially higher efficiency, and …