Engineering Semi‐Reversed Quantum Well Photocatalysts for Highly‐Efficient Solar‐to‐Fuels Conversion
Q Yuan, J Huang, A Li, N Lu, W Lu, Y Zhu… - Advanced …, 2024 - Wiley Online Library
Semiconductor quantum wells (QWs) exhibit high charge‐utilization efficiency for light‐
emitting applications due to their strong charge confinement effect. Inspired by this effect …
emitting applications due to their strong charge confinement effect. Inspired by this effect …
Recent advances in THz detectors based on semiconductor structures with quantum confinement: a review
AE Yachmenev, RA Khabibullin… - Journal of Physics D …, 2022 - iopscience.iop.org
Beginning from the 1990s, an ever-lasting interest in the terahertz (THz) spectroscopy and
THz instruments has produced wide progress in the development of high-speed THz …
THz instruments has produced wide progress in the development of high-speed THz …
Submonolayer quantum dots for optoelectronic devices
Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …
optoelectronic devices because of their strong quantum confinement and bandgap …
Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors
We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML)
quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with …
quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with …
Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure
We have investigated optical properties and device performance of sub-monolayer quantum
dots infrared photodetector with confinement enhancing (CE) barrier and compared with …
dots infrared photodetector with confinement enhancing (CE) barrier and compared with …
A multicolor, broadband (5–20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector
An InAs/GaAs quantum dot infrared photodetector with strong, multicolor, broadband (5–20
μm) photoresponse is reported. Using a combined quaternary In 0.21 Al 0.21 Ga 0.58 As …
μm) photoresponse is reported. Using a combined quaternary In 0.21 Al 0.21 Ga 0.58 As …
Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers
This study investigated the effects of the number of stacking layers (S) on the optical
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
We used rapid thermal annealing and low-temperature photoluminescence to compare the
optoelectronic properties of InAs/GaAs Stranski-Krastanov and submonolayer quantum dots …
optoelectronic properties of InAs/GaAs Stranski-Krastanov and submonolayer quantum dots …
High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs (001) with a 2× 4 surface reconstruction
The submonolayer quantum dots of an infrared photodetector were grown by molecular
beam epitaxy in the presence of a very low As flux and a 2× 4 surface reconstruction in order …
beam epitaxy in the presence of a very low As flux and a 2× 4 surface reconstruction in order …
Design and simulation of two-color mid-infrared photoconductors based on intersubband transitions in quantum structures
In this work, a novel design of a two-color mid-infrared photoconductor at room temperature
exploiting the superposition of different sizes of PbS/ZnS core/shell quantum dots as an …
exploiting the superposition of different sizes of PbS/ZnS core/shell quantum dots as an …