Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Recent advances in 2D material theory, synthesis, properties, and applications
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of
emergent 2D systems. Here, we review recent advances in the theory, synthesis …
emergent 2D systems. Here, we review recent advances in the theory, synthesis …
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
Three-dimensional monolithic integration of memory devices with logic transistors is a
frontier challenge in computer hardware. This integration is essential for augmenting …
frontier challenge in computer hardware. This integration is essential for augmenting …
Ferroelectrics-integrated two-dimensional devices toward next-generation electronics
Ferroelectric materials play an important role in a wide spectrum of semiconductor
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …
technologies and device applications. Two-dimensional (2D) van der Waals (vdW) …
Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-
power, nonvolatile memories and made FE memories a commercial reality. Despite these …
power, nonvolatile memories and made FE memories a commercial reality. Despite these …
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
We report on the thickness scaling behavior of ferroelectric Sc 0.3 Al 0.7 N (ScAlN) films
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …
grown on Mo substrates by molecular beam epitaxy. Switchable ferroelectricity is confirmed …
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …
attracted growing interest due to its promising applications in data storage and in‐memory …
[HTML][HTML] Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
X Liu, J Zheng, D Wang, P Musavigharavi… - Applied Physics …, 2021 - pubs.aip.org
In this Letter, we report a back-end-of-line (BEOL), complementary metal–oxide–
semiconductor (CMOS)-compatible Al 0.64 Sc 0.36 N-based ferroelectric diode that shows …
semiconductor (CMOS)-compatible Al 0.64 Sc 0.36 N-based ferroelectric diode that shows …
[HTML][HTML] Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films
This manuscript reports the temperature dependence of ferroelectric switching in Al 0.84 Sc
0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all …
0.16 N, Al 0.93 B 0.07 N, and AlN thin films. Polarization reversal is demonstrated in all …