In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

The absorption coefficient and refractive index of Ge 1− x Sn x alloys (x from 0% to 10%)
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …

To improve the performance of electronic devices, extensive research efforts have recently
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …

We present a new etch chemistry that enables highly selective dry etching of germanium
over its alloy with tin (Ge1–x Sn x). We address the challenges in synthesis of high-quality …

Bandgap and stress engineering using group IV materials-Si, Ge, and Sn, and their alloys
are employed to design a FinFET-based CMOS solution for the 7-nm technology node and …

Crystalline GeSn thin films with Sn content up to 0.28 were deposited on Sn graded GeSn
buffer on a Ge substrate at low temperatures by sputtering epitaxy. The structural properties …

70 C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of
amorphous Ge | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt …

Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may
promote design of new materials with unexpected properties. Here, local atomic ordering is …

In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on
rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was …