A wide-band UV photodiode based on n-ZnO/p-Si heterojunctions
We report on the fabrication of zinc oxide (ZnO) nanorods on p-type silicon (p-Si)
photodiodes. The nanorods are prepared by low-temperature hydrothermal processing. The …
photodiodes. The nanorods are prepared by low-temperature hydrothermal processing. The …
Excellent rectifying properties of the n-3C-SiC/p-Si heterojunction subjected to high temperature annealing for electronics, MEMS, and LED applications
P Tanner, A Iacopi, HP Phan, S Dimitrijev, L Hold… - Scientific reports, 2017 - nature.com
This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat
treatments between 1000° C and 1300° C. Because of the potential for silicon carbide in …
treatments between 1000° C and 1300° C. Because of the potential for silicon carbide in …
Conduction mechanism and UV/visible photodetection properties of p-Si/n-SiC heterostructure
This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions
subjected to UV and visible light in addition to the conduction mechanism of the device. The …
subjected to UV and visible light in addition to the conduction mechanism of the device. The …
Characterization and modeling of nn Si∕ SiC heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis… - Journal of applied …, 2007 - pubs.aip.org
In this paper we investigate the physical and electrical properties of silicon layers grown by
molecular beam epitaxy on 4 H-Si C substrates, evaluating the effect of the Si doping, Si …
molecular beam epitaxy on 4 H-Si C substrates, evaluating the effect of the Si doping, Si …
Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions
Y Zhang, J Xu, B Lin, Z Fu, S Zhong, C Liu… - Applied Surface …, 2006 - Elsevier
Nanocrystalline zinc oxide (nc-ZnO) films were prepared by a sol–gel process on p-type
single-crystalline Si substrates to fabricate nc-ZnO/p-Si heterojunctions. The structure and …
single-crystalline Si substrates to fabricate nc-ZnO/p-Si heterojunctions. The structure and …
A study of conduction of ZnO film/p-Si heterojunction fabricated by photoinduced electrodeposition under illumination
JD Lee, CY Park, HS Kim, JJ Lee… - Journal of Physics D …, 2010 - iopscience.iop.org
Thin ZnO films were directly grown on p-Si (1 0 0) substrates by photoinduced
electrodeposition under illumination. In this case, p-Si wafer behaves as a photocathode. At …
electrodeposition under illumination. In this case, p-Si wafer behaves as a photocathode. At …
A vertical superjunction MOSFET with n-Si and p-3C-SiC pillars
M Huang, Y Deng, L Lai, Z Yang… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars is introduced. Since 3C-
SiC has 4× higher breakdown electric field than Si, the sensitivity of the breakdown voltage …
SiC has 4× higher breakdown electric field than Si, the sensitivity of the breakdown voltage …
3C-SiC grown on Si by using a Si1-xGex buffer layer
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation
devices, but the development of high quality 3C-SiC layer still represents a scientific and …
devices, but the development of high quality 3C-SiC layer still represents a scientific and …
Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si (111)
We present a study of the stress state in cubic silicon carbide (3C–SiC) thin films (120 and
300 nm) grown by solid-source molecular-beam epitaxy (SSMBE) on Si (111) substrates …
300 nm) grown by solid-source molecular-beam epitaxy (SSMBE) on Si (111) substrates …
Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode
Au/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure
chemical vapor deposition technique. The device parameters such as barrier height, ideality …
chemical vapor deposition technique. The device parameters such as barrier height, ideality …