Phase change materials and phase change memory
Phase change memory (PCM) is an emerging technology that combines the unique
properties of phase change materials with the potential for novel memory devices, which can …
properties of phase change materials with the potential for novel memory devices, which can …
Phase change memory
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical
and thermal properties of phase change materials are surveyed with a focus on the …
and thermal properties of phase change materials are surveyed with a focus on the …
Electrical phase-change memory: fundamentals and state of the art
M Terao, T Morikawa, T Ohta - Japanese Journal of Applied …, 2009 - iopscience.iop.org
Phase-change random access memory (PRAM) technology is reviewed. PRAM uses the
phase change between the amorphous state and the crystalline state caused by Joule …
phase change between the amorphous state and the crystalline state caused by Joule …
Phase change memory technology
GW Burr, MJ Breitwisch, M Franceschini… - Journal of Vacuum …, 2010 - pubs.aip.org
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-
state memory technology built around the large electrical contrast between the highly …
state memory technology built around the large electrical contrast between the highly …
Low-power switching of phase-change materials with carbon nanotube electrodes
Phase-change materials (PCMs) are promising candidates for nonvolatile data storage and
reconfigurable electronics, but high programming currents have presented a challenge to …
reconfigurable electronics, but high programming currents have presented a challenge to …
Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage
B Liu, T Wei, J Hu, W Li, Y Ling, Q Liu… - Chinese …, 2021 - iopscience.iop.org
The era of information explosion is coming and information need to be continuously stored
and randomly accessed over long-term periods, which constitute an insurmountable …
and randomly accessed over long-term periods, which constitute an insurmountable …
Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide
nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to …
nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to …
Chalcogenide Chemistry in Ionic Liquids: Nonlinear Optical Wave-Mixing Properties of the Double-Cubane Compound [Sb7S8Br2](AlCl4)3
The new cation [Sb7S8Br2] 3+ has a double-cubane structure and forms as the [AlCl4]− salt
from the ionic liquid EMIMBr− AlCl3 (EMIM= 1-ethyl-3-methylimidazolium) at 165° C. The …
from the ionic liquid EMIMBr− AlCl3 (EMIM= 1-ethyl-3-methylimidazolium) at 165° C. The …
Self-aligned nanotube–nanowire phase change memory
A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the
smallest and most energy-efficient devices that can function reliably. Unlike charge-based …
smallest and most energy-efficient devices that can function reliably. Unlike charge-based …
Designing fast and efficient electrically driven phase change photonics using foundry compatible waveguide-integrated microheaters
Phase change chalcogenides such as Ge_2Sb_2Te_5 (GST) have recently enabled
advanced optical devices for applications such as in-memory computing, reflective displays …
advanced optical devices for applications such as in-memory computing, reflective displays …