The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate
dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of …

Moore's law technology scaling has improved performance by five orders of magnitude in
the last four decades. As advanced technologies continue the pursuit of Moore's law, a …

Today, micro-electronic circuits are undeniably and ubiquitously present in our society.
Transportation vehicles such as cars, trains, buses, and airplanes make abundant use of …

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for
modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer …

The key message of this paper is that process variation is not an insurmountable barrier to
Moore's Law, but is simply another challenge to be overcome. This message is illustrated …

This paper presents a systematic methodology to develop compact MOSFET models for
process variability-aware VLSI circuit design. Process variability in scaled CMOS …

Titanium nitride (TiN) films have been used as gate electrode on metal-oxide-semiconductor
(MOS) devices. TiN effective work function (EWF) values have been often reported as …

This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …

By accurately tuning the SiO 2 interlayer thickness the density and polarity of charges in
Si/SiO 2/Al 2 O 3 stacks can be controlled. We report on the number density, polarity, and …

This paper explores CMOS transistor scaling past the 32 nm generation and its implications
on variation. Front-end variation sources are reviewed, with detailed discussion on …