We review prior and on-going works in using laser annealing (LA) techniques in the
development of chalcogenide-based [CdTe and Cu (In, Ga)(S, Se) 2] solar cells. LA can …

A thin film of SnS 2 obtained by close-spaced vacuum sublimation was irradiated by an Nd:
YAG laser (λ= 532 nm) using two intensities of laser radiation of 8.5 MW/cm 2 and 11.5 …

We developed a novel process for fabricating oxygen-rich Zn (O, S) buffer layers by
magnetron reactive sputtering with a single oxygen-rich Zn (O, S) target, suitable for …

Cu (In, Ga) Se2 (CIGSe) is a polycrystalline absorber layer in thin film solar cells with solar
conversion efficiencies exceeding 20%. High temperature annealing for periods of minutes …

Rapid laser annealing of a Cu (In, Ga) Se 2 (CIGS) thin film absorber was proposed and
demonstrated using a continuous 532-nm Nd: YAG laser, following sputtering with Cu 0.9 In …

In this work, CuInS 2 (CIS) nanocrystals are successfully synthesized by microwave-assisted
technique and further calcined at several different temperatures with or without additional Ar …

For the production of high efficiency thin film, Cu (In, Ga) Se2 solar cells, absorber layers
with grain sizes of a few hundred nanometers and without detrimental secondary phases are …

Laser annealing can reduce the annealing time required to form Cu (In, Ga)(S, Se) 2
(CIGSe) thin films for use in thin film photovoltaics to a single second timescale, if not faster …

This paper presents a numerical simulation model for analysing diode laser-induced thermal
phenomena on high absorbing thin-films. Continuous wave (CW) diode laser, in the form of …

This paper presents a numerical study of the continuous wave (CW) diode laser processing
of Cu 2 ZnSnS 4 (CZTS) thin-film. The CZTS film's structural, optical, surface morphological …