An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime

LA Samoska - IEEE Transactions on Terahertz Science and …, 2011 - ieeexplore.ieee.org
We present an overview of solid-state integrated circuit amplifiers approaching terahertz
frequencies based on the latest device technologies which have emerged in the past …

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

J Ajayan, D Nirmal, P Mohankumar, D Kuriyan… - Microelectronics …, 2019 - Elsevier
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

Yebes 40 m radio telescope and the broad band Nanocosmos receivers at 7 mm and 3 mm for line surveys

F Tercero, JA López-Pérez, JD Gallego… - Astronomy & …, 2021 - aanda.org
Context. Yebes 40 m radio telescope is the main and largest observing instrument at Yebes
Observatory and is devoted to very long baseline interferometry (VLBI) and single-dish …

-Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

D Bleh, M Rösch, M Kuri, A Dyck… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
In this paper, a radar demonstrator system with real-time capability operating at W-band is
presented. It operates at 90-100 GHz and provides 3-D information about the illuminated …

Enhancement of to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

T Takahashi, Y Kawano, K Makiyama… - … on Electron Devices, 2016 - ieeexplore.ieee.org
A high maximum frequency of oscillation (f max) of 910 GHz was achieved at InAlAs/InGaAs
highelectron mobility transistors (HEMTs) with a relatively long gate length (LG) of 75 nm by …

A new frontier in ultralow power wireless links: Network-on-chip and chip-to-chip interconnects

S Laha, S Kaya, DW Matolak, W Rayess… - … on Computer-Aided …, 2014 - ieeexplore.ieee.org
This paper explores the general framework and prospects for on-chip and off-chip wireless
interconnects implemented for high-performance computing (HPC) systems in the context of …

A 50-nm gate-length metamorphic HEMT technology optimized for cryogenic ultra-low-noise operation

F Heinz, F Thome, A Leuther… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article reports on the investigation and optimization of cryogenic noise mechanisms in
InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with …

Millimeter-wave tomographic imaging of composite materials based on phase evaluation

D Meier, T Schwarze, T Link, C Zech… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
A novel data processing algorithm for the generation of tomographic images of composite
materials, based on measurements acquired via frequency-modulated continuous-wave …

Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs

F Thome, A Leuther, H Massler… - 2017 IEEE MTT-S …, 2017 - ieeexplore.ieee.org
Based on two low-noise amplifier (LNA) millimeter-wave integrated circuits (MMICs), this
paper reports on a comparison between a 35-nm and a 50-nm gate-length metamorphic …

mm-Wave SAR demonstrator as a test bed for advanced solutions in microwave imaging

M Caris, S Stanko, M Malanowski… - IEEE Aerospace and …, 2014 - ieeexplore.ieee.org
The capability of imaging and surveying ground areas with airborne and spaceborne
sensors has a very high priority in many applications, both in the civilian and military sectors …