Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Hybrid 2D–CMOS microchips for memristive applications
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
advanced electronic circuits is a major goal for the semiconductor industry,. However, most …
Physics of the switching kinetics in resistive memories
S Menzel, U Böttger, M Wimmer… - Advanced functional …, 2015 - Wiley Online Library
Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …
and electrochemical processes, are discussed with respect to their potential to overcome the …
Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches
S Ambrogio, S Balatti, DC Gilmer… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
To allow for novel memory and computing schemes based on the resistive switching
memory (RRAM), physically based compact models are needed. This paper presents a new …
memory (RRAM), physically based compact models are needed. This paper presents a new …
Thermal crosstalk in 3-dimensional RRAM crossbar array
Abstract High density 3-dimensional (3D) crossbar resistive random access memory
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
Voltage-Controlled Cycling Endurance of HfOx-Based Resistive-Switching Memory
S Balatti, S Ambrogio, Z Wang, S Sills… - … on Electron Devices, 2015 - ieeexplore.ieee.org
Resistive-switching memory (RRAM) based on metal oxide is currently considered as a
possible candidate for future nonvolatile storage and storage-class memory. To explore …
possible candidate for future nonvolatile storage and storage-class memory. To explore …
Spike-timing dependent plasticity in a transistor-selected resistive switching memory
S Ambrogio, S Balatti, F Nardi, S Facchinetti… - …, 2013 - iopscience.iop.org
In a neural network, neuron computation is achieved through the summation of input signals
fed by synaptic connections. The synaptic activity (weight) is dictated by the synchronous …
fed by synaptic connections. The synaptic activity (weight) is dictated by the synchronous …
Area and thickness scaling of forming voltage of resistive switching memories
A Chen - IEEE electron device letters, 2013 - ieeexplore.ieee.org
Based on probability analysis, this letter presents a simplified analytical model for the area
and thickness scaling of forming voltage of resistive switching memories. The model is …
and thickness scaling of forming voltage of resistive switching memories. The model is …
Set variability and failure induced by complementary switching in bipolar RRAM
S Balatti, S Ambrogio, DC Gilmer… - IEEE electron device …, 2013 - ieeexplore.ieee.org
The resistive switching memory (RRAM) offers fast switching, low-voltage operation, and
scalable device area. However, reliability and variability issues must be understood …
scalable device area. However, reliability and variability issues must be understood …
Challenges and circuit techniques for energy-efficient on-chip nonvolatile memory using memristive devices
Memristive devices have shown considerable promise for on-chip nonvolatile memory and
computing circuits in energy-efficient systems. However, this technology is limited with …
computing circuits in energy-efficient systems. However, this technology is limited with …