Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides
Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …
the development of next‐generation light‐emitting devices owing to their unique electronic …
Defects and reliability of GaN‐based LEDs: review and perspectives
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
Recent progress in red light-emitting diodes by III-nitride materials
GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …
same material system. These emitters are expected to be next-generation red, green, and …
[HTML][HTML] GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
solid-state lighting. They exhibit impressive figures of merit like an internal quantum …
Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review
This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …
The physics of recombinations in III-nitride emitters
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …
emphasis on experimental investigations. After a discussion of various methods of …
On the search for efficient solid state light emitters: Past, present, future
C Weisbuch - ECS Journal of Solid State Science and …, 2019 - iopscience.iop.org
The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …
UV-based technologies for SARS-CoV2 inactivation: Status and perspectives
Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) is the etiologic agent of
COVID-19, which has affected the international healthcare systems since the beginning of …
COVID-19, which has affected the international healthcare systems since the beginning of …
The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
The development of efficient green light-emitting diodes (LEDs) is of paramount importance
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
Quantum efficiency of III-nitride emitters: Evidence for defect-assisted nonradiative recombination and its effect on the green gap
Carrier-lifetime measurements reveal that, contrary to common expectations, the high-
current nonradiative recombination (droop) in III-nitride light emitters is comprised of two …
current nonradiative recombination (droop) in III-nitride light emitters is comprised of two …