This paper presents an efficient artificial neural network (ANN) electrothermal modeling
approach applied to GaN devices. The proposed method is based on decomposing the …

Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …

In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …

Direct measurements of self-heating in gallium nitride (GaN) transistor using ultraviolet (UV)
and visible micro-Raman spectroscopy are reported. The material stack was grown on …

This article presents an artificial neural network (ANN) approaches for small‐and large‐
signal modeling of active devices. The small‐signal characteristics were modeled by S …

This letter reports on a new method for the characterization of transistors transient self-
heating based on gate end-to-end resistance measurement. An alternative power signal is …

In this paper, several experimental methods (electrical and optical) for channel temperature
detection in AlGaN/GaN high-electron mobility transistors have been studied and …

This letter describes a new method to extract the operating temperature in short-gate length
AlGaN/GaN high electron mobility transistors (HEMTs) dedicated to RF applications. For this …

A new hybrid method for estimating channel temperature and extracting the AlGaN/GaN
high electron mobility transistors (HEMTs) model parameters is proposed in this paper. The …

Knowing the temperature distribution within the conducting walls of various multilayer-type
materials is crucial for a better understanding of heat-transfer processes. This applies to …